Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy: structural and optical characterization M Tchernycheva, C Sartel, G Cirlin, L Travers, G Patriarche, JC Harmand, ... Nanotechnology 18 (38), 385306, 2007 | 167 | 2007 |
Defect-mediated spin relaxation and dephasing in graphene MB Lundeberg, R Yang, J Renard, JA Folk Physical review letters 110 (15), 156601, 2013 | 128 | 2013 |
Evidence for quantum-confined Stark effect in GaN/AlN quantum dots in nanowires J Renard, R Songmuang, G Tourbot, C Bougerol, B Daudin, B Gayral Physical Review B—Condensed Matter and Materials Physics 80 (12), 121305, 2009 | 128 | 2009 |
Electrical Control of g-Factor in a Few-Hole Silicon Nanowire MOSFET B Voisin, R Maurand, S Barraud, M Vinet, X Jehl, M Sanquer, J Renard, ... Nano letters 16 (1), 88-92, 2016 | 122 | 2016 |
Few-electron edge-state quantum dots in a silicon nanowire field-effect transistor B Voisin, VH Nguyen, J Renard, X Jehl, S Barraud, F Triozon, M Vinet, ... Nano letters 14 (4), 2094-2098, 2014 | 122 | 2014 |
Exciton and biexciton luminescence from single GaN/AlN quantum dots in nanowires J Renard, R Songmuang, C Bougerol, B Daudin, B Gayral Nano letters 8 (7), 2092-2096, 2008 | 119 | 2008 |
In-Plane Magnetic Domains and Néel-like Domain Walls in Thin Flakes of the Room Temperature CrTe2 Van der Waals Ferromagnet A Purbawati, J Coraux, J Vogel, A Hadj-Azzem, NJ Wu, N Bendiab, ... ACS Applied Materials & Interfaces 12 (27), 30702-30710, 2020 | 95 | 2020 |
Plasma-assisted molecular beam epitaxy growth of GaN nanowires using indium-enhanced diffusion O Landré, R Songmuang, J Renard, E Bellet-Amalric, H Renevier, ... Applied Physics Letters 93 (18), 2008 | 79 | 2008 |
Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2 in the Presence of Defects, Strain, and Charged Impurities S Dubey, S Lisi, G Nayak, F Herziger, VD Nguyen, T Le Quang, ... ACS nano 11 (11), 11206-11216, 2017 | 62 | 2017 |
Origins of nonlocality near the neutrality point in graphene J Renard, M Studer, JA Folk Physical review letters 112 (11), 116601, 2014 | 59 | 2014 |
Suppression of nonradiative processes in long-lived polar GaN/AlN quantum dots J Renard, PK Kandaswamy, E Monroy, B Gayral Applied Physics Letters 95 (13), 2009 | 59 | 2009 |
Interband and intersubband optical characterization of semipolar (112¯ 2)-oriented GaN/AlN multiple-quantum-well structures L Lahourcade, PK Kandaswamy, J Renard, P Ruterana, H Machhadani, ... Applied Physics Letters 93 (11), 2008 | 50 | 2008 |
Exciton-Exciton Interaction beyond the Hydrogenic Picture in a Monolayer in the Strong Light-Matter Coupling Regime P Stepanov, A Vashisht, M Klaas, N Lundt, S Tongay, M Blei, S Höfling, ... Physical review letters 126 (16), 167401, 2021 | 48 | 2021 |
Coherence and Density Dynamics of Excitons in a Single-Layer MoS2 Reaching the Homogeneous Limit T Jakubczyk, G Nayak, L Scarpelli, WL Liu, S Dubey, N Bendiab, L Marty, ... ACS nano 13 (3), 3500-3511, 2019 | 47 | 2019 |
Unravelling external perturbation effects on the optical phonon response of graphene N Bendiab, J Renard, C Schwarz, A Reserbat‐Plantey, L Djevahirdjian, ... Journal of Raman Spectroscopy 49 (1), 130-145, 2018 | 47 | 2018 |
Ga kinetics in plasma-assisted molecular-beam epitaxy of GaN (112¯ 2): Effect on the structural and optical properties L Lahourcade, J Renard, B Gayral, E Monroy, MP Chauvat, P Ruterana Journal of Applied Physics 103 (9), 2008 | 47 | 2008 |
Spatial fluctuations of optical emission from single ZnO/MgZnO nanowire quantumwells C Czekalla, J Guinard, C Hanisch, BQ Cao, EM Kaidashev, N Boukos, ... Nanotechnology 19 (11), 115202, 2008 | 47 | 2008 |
A gate-tunable graphene Josephson parametric amplifier G Butseraen, A Ranadive, N Aparicio, K Rafsanjani Amin, A Juyal, ... Nature Nanotechnology 17 (11), 1153-1158, 2022 | 34 | 2022 |
Fine optical spectroscopy of the 3.45 eV emission line in GaN nanowires D Sam-Giao, R Mata, G Tourbot, J Renard, A Wysmolek, B Daudin, ... Journal of Applied Physics 113 (4), 2013 | 33 | 2013 |
Optical spectroscopy of cubic GaN in nanowires J Renard, G Tourbot, D Sam-Giao, C Bougerol, B Daudin, B Gayral Applied Physics Letters 97 (8), 2010 | 33 | 2010 |