| Ambipolar MoTe2 Transistors and Their Applications in Logic Circuits YF Lin, Y Xu, ST Wang, SL Li, M Yamamoto, A Aparecido‐Ferreira, W Li, ... Advanced Materials 26 (20), 3263-3269, 2014 | 482 | 2014 |
| Thickness-dependent interfacial coulomb scattering in atomically thin field-effect transistors SL Li, K Wakabayashi, Y Xu, S Nakaharai, K Komatsu, WW Li, YF Lin, ... Nano letters 13 (8), 3546-3552, 2013 | 380 | 2013 |
| Strong Enhancement of Raman Scattering from a Bulk-Inactive Vibrational Mode in Few-Layer MoTe2 M Yamamoto, ST Wang, M Ni, YF Lin, SL Li, S Aikawa, WB Jian, K Ueno, ... Acs Nano 8 (4), 3895-3903, 2014 | 348 | 2014 |
| Doping: a key enabler for organic transistors Y Xu, H Sun, A Liu, HH Zhu, W Li, YF Lin, YY Noh Advanced Materials 30 (46), 1801830, 2018 | 194 | 2018 |
| Thickness Scaling Effect on Interfacial Barrier and Electrical Contact to Two-Dimensional MoS2 Layers SL Li, K Komatsu, S Nakaharai, YF Lin, M Yamamoto, X Duan, ... ACS nano 8 (12), 12836-12842, 2014 | 191 | 2014 |
| Engineering the Structural and Electronic Phases of MoTe2 through W Substitution D Rhodes, DA Chenet, BE Janicek, C Nyby, Y Lin, W Jin, D Edelberg, ... Nano letters 17 (3), 1616-1622, 2017 | 170 | 2017 |
| Electrostatically Reversible Polarity of Ambipolar α-MoTe2 Transistors S Nakaharai, M Yamamoto, K Ueno, YF Lin, SL Li, K Tsukagoshi ACS nano 9 (6), 5976-5983, 2015 | 150 | 2015 |
| High mobilities in layered InSe transistors with indium‐encapsulation‐induced surface charge doping M Li, CY Lin, SH Yang, YM Chang, JK Chang, FS Yang, C Zhong, ... Advanced Materials 30 (44), 1803690, 2018 | 148 | 2018 |
| The impact of nanocontact on nanowire based nanoelectronics YF Lin, WB Jian Nano letters 8 (10), 3146-3150, 2008 | 141 | 2008 |
| Oxidation-boosted charge trapping in ultra-sensitive van der Waals materials for artificial synaptic features FS Yang, M Li, MP Lee, IY Ho, JY Chen, H Ling, Y Li, JK Chang, SH Yang, ... Nature Communications 11 (1), 2972, 2020 | 121 | 2020 |
| Multilayer Graphene–WSe2 Heterostructures for WSe2 Transistors HL Tang, MH Chiu, CC Tseng, SH Yang, KJ Hou, SY Wei, JK Huang, ... ACS nano 11 (12), 12817-12823, 2017 | 121 | 2017 |
| Reversible and Precisely Controllable p/n‐Type Doping of MoTe2 Transistors through Electrothermal Doping YM Chang, SH Yang, CY Lin, CH Chen, CH Lien, WB Jian, K Ueno, ... Advanced Materials 30 (13), 1706995, 2018 | 91 | 2018 |
| Origin of Noise in Layered MoTe₂ Transistors and its Possible Use for Environmental Sensors. YF Lin, Y Xu, CY Lin, YW Suen, M Yamamoto, S Nakaharai, K Ueno, ... Advanced Materials (Deerfield Beach, Fla.) 27 (42), 6612-6619, 2015 | 89 | 2015 |
| Exploring the charge transport in conjugated polymers Y Xu, H Sun, W Li, YF Lin, F Balestra, G Ghibaudo, YY Noh Advanced Materials 29 (41), 1702729, 2017 | 88 | 2017 |
| Boost up carrier mobility for ferroelectric organic transistor memory via buffering interfacial polarization fluctuation H Sun, Q Wang, Y Li, YF Lin, Y Wang, Y Yin, Y Xu, C Liu, K Tsukagoshi, ... Scientific reports 4 (1), 7227, 2014 | 79 | 2014 |
| Nano approach investigation of the conduction mechanism in polyaniline nanofibers YF Lin, CH Chen, WJ Xie, SH Yang, CS Hsu, MT Lin, WB Jian Acs Nano 5 (2), 1541-1548, 2011 | 79 | 2011 |
| Barrier inhomogeneities at vertically stacked graphene-based heterostructures YF Lin, W Li, SL Li, Y Xu, A Aparecido-Ferreira, K Komatsu, H Sun, ... Nanoscale 6 (2), 795-799, 2014 | 75 | 2014 |
| Planar-Processed Polymer Transistors. Y Xu, H Sun, EY Shin, YF Lin, W Li, YY Noh Advanced Materials (Deerfield Beach, Fla.) 28 (38), 8531-8537, 2016 | 74 | 2016 |
| Filling the gap between topological insulator nanomaterials and triboelectric nanogenerators M Li, HW Lu, SW Wang, RP Li, JY Chen, WS Chuang, FS Yang, YF Lin, ... Nature communications 13 (1), 938, 2022 | 66 | 2022 |
| Deformable, resilient, and mechanically-durable triboelectric nanogenerator based on recycled coffee waste for wearable power and self-powered smart sensors M Li, WY Cheng, YC Li, HM Wu, YC Wu, HW Lu, SL Cheng, L Li, ... Nano Energy 79, 105405, 2021 | 65 | 2021 |
Kazuhito TsukagoshiWPI-MANA, National Institute for Materials Science (NIMS)在 nims.go.jp 的電子郵件地址已通過驗證
