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SHAO-YU CHEN
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Cited by
Year
Helicity-Resolved Raman Scattering of MoS2, MoSe2, WS2, and WSe2 Atomic Layers
SY Chen, C Zheng, MS Fuhrer, J Yan
Nano letters 15 (4), 2526-2532, 2015
2962015
Coulomb-bound four-and five-particle intervalley states in an atomically-thin semiconductor
SY Chen, T Goldstein, T Taniguchi, K Watanabe, J Yan
Nature communications 9 (1), 3717, 2018
1812018
Antenna enhanced graphene thz emitter and detector
J Tong, M Muthee, SY Chen, SK Yngvesson, J Yan
Nano Letters 15 (8), 5295¡V5301, 2015
1702015
Extrinsic Origin of Persistent Photoconductivity in Monolayer MoS2 Field Effect Transistors
YC Wu, CH Liu, SY Chen, FY Shih, PH Ho, CW Chen, CT Liang, ...
Scientific Reports 5 (11472), 2015
1332015
Activation of New Raman Modes by Inversion Symmetry Breaking in Type II Weyl Semimetal Candidate T¡¬-MoTe2
SY Chen, T Goldstein, D Venkataraman, A Ramasubramaniam, J Yan
Nano Letters 16 (9), 5852-5860, 2016
1252016
Biologically inspired graphene-chlorophyll phototransistors with high gain
SY Chen, YY Lu, FY Shih, PH Ho, YF Chen, CW Chen, YT Chen, ...
Carbon 63, 23-29, 2013
1162013
Luminescent Emission of Excited Rydberg Excitons from Monolayer WSe2
SY Chen, Z Lu, T Goldstein, J Tong, A Chaves, J Kunstmann, ...
Nano letters 19 (4), 2464-2471, 2019
672019
Transport/magnetotransport of high-performance graphene transistors on organic molecule-functionalized substrates
SY Chen, PH Ho, RJ Shiue, CW Chen, WH Wang
Nano letters 12 (2), 964-969, 2012
662012
Ultrathin Ga2O3 Glass: A Large‐Scale Passivation and Protection Material for Monolayer WS2
M Wurdack, T Yun, E Estrecho, N Syed, S Bhattacharyya, M Pieczarka, ...
Advanced Materials 33 (3), 2005732, 2021
652021
Raman scattering and anomalous Stokes anti-Stokes ratio in MoTe2 atomic layers
T Goldstein, SY Chen, D Xiao, A Ramasubramaniam, J Yan
Scientific Reports 6 (28024), 2016
572016
Superior Valley Polarization and Coherence of Excitons in Monolayer
SY Chen, T Goldstein, J Tong, T Taniguchi, K Watanabe, J Yan
Physical review letters 120 (4), 046402, 2018
522018
Intrinsic Phonon Bands in High-Quality Monolayer T¡¬ Molybdenum Ditelluride
SY Chen, CH Naylor, T Goldstein, ATC Johnson, J Yan
ACS nano 11 (1), 814-820, 2017
502017
Ground and excited state exciton polarons in monolayer MoSe2
T Goldstein, YC Wu, SY Chen, T Taniguchi, K Watanabe, K Varga, J Yan
The Journal of Chemical Physics 153 (7), 2020
442020
Oxidized-monolayer tunneling barrier for strong Fermi-level depinning in layered InSe transistors
YH Chen, CY Cheng, SY Chen, JSD Rodriguez, HT Liao, K Watanabe, ...
npj 2D Materials and Applications 3 (1), 49, 2019
212019
Residue-free fabrication of high-performance graphene devices by patterned PMMA stencil mask
FY Shih, SY Chen, CH Liu, PH Ho, TS Wu, CW Chen, YF Chen, WH Wang
AIP Advances 4 (6), 2014
162014
Defects, band bending and ionization rings in MoS2
I Di Bernardo, J Blyth, L Watson, K Xing, YH Chen, SY Chen, ...
Journal of Physics: Condensed Matter 34 (17), 174002, 2022
72022
Demonstration of distinct semiconducting transport characteristics of monolayer graphene functionalized via plasma activation of substrate surfaces
PH Wang, FY Shih, SY Chen, AB Hernandez, PH Ho, LY Chang, ...
Carbon 93, 353-360, 2015
72015
Phase Modulation of Self-Gating in Ionic Liquid-Functionalized InSe Field-Effect Transistors
CY Cheng, WL Pai, YH Chen, NT Paylaga, PY Wu, CW Chen, CT Liang, ...
Nano Letters 22 (6), 2270-2276, 2022
62022
Inversion-symmetry-breaking-activated shear Raman bands in -MoTe
SY Chen, T Goldstein, A Ramasubramaniam, J Yan
arXiv preprint arXiv:1602.03566, 2016
62016
The key role of non-local screening in the environment-insensitive exciton fine structures of transition-metal dichalcogenide monolayers
WH Li, JD Lin, PY Lo, GH Peng, CY Hei, SY Chen, SJ Cheng
Nanomaterials 13 (11), 1739, 2023
52023
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Articles 1–20