Sridhar Chandrasekaran
TitleCited byYear
Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cell
FM Simanjuntak, S Chandrasekaran, B Pattanayak, CC Lin, TY Tseng
Nanotechnology 28 (38), 38LT02, 2017
162017
Effect of barrier layer on switching polarity of ZrO2-based conducting-bridge random access memory
S Chandrasekaran, FM Simanjuntak, TL Tsai, CA Lin, TY Tseng
Applied Physics Letters 111 (11), 113108, 2017
152017
Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cell
FM Simanjuntak, P Singh, S Chandrasekaran, FJ Lumbantoruan, ...
Semiconductor Science and Technology 32 (12), 124003, 2017
122017
The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2-based resistive switching random …
S Chandrasekaran, FM Simanjuntak, R Aluguri, TY Tseng
Thin Solid Films 660, 777-781, 2018
92018
ZnO2/ZnO bilayer switching film for making fully transparent analog memristor devices
FM Simanjuntak, S Chandrasekaran, CC Lin, TY Tseng
APL Materials 7 (5), 051108, 2019
62019
Switching failure mechanism in zinc peroxide-based programmable metallization cell
FM Simanjuntak, S Chandrasekaran, CC Lin, TY Tseng
Nanoscale research letters 13 (1), 327, 2018
62018
Controlled resistive switching characteristics of ZrO2-based electrochemical metallization memory devices by modifying the thickness of the metal barrier layer
S Chandrasekaran, FM Simanjuntak, TY Tseng
Japanese Journal of Applied Physics 57 (4S), 04FE10, 2018
62018
Synthesis of mesoporous NiFe2O4 nanoparticles for enhanced supercapacitive performance
N Kumar, A Kumar, S Chandrasekaran, TY Tseng
J. Clean Energy Technol. 6, 51-55, 2018
62018
Improving linearity by introducing Al in HfO2 as a memristor synapse device
S Chandrasekaran, FM Simanjuntak, R Saminathan, D Panda, TY Tseng
Nanotechnology 30 (44), 445205, 2019
52019
Enhanced Switching Properties in TaOx Memristors Using Diffusion Limiting Layer for Synaptic Learning
PY Jung, D Panda, S Chandrasekaran, S Rajasekaran, TY Tseng
IEEE Journal of the Electron Devices Society 8, 110-115, 2020
2020
Enhanced Synaptic Linearity in ZnO-Based Invisible Memristive Synapse by Introducing Double Pulsing Scheme
S Chandrasekaran, FM Simanjuntak, D Panda, TY Tseng
IEEE Transactions on Electron Devices 66 (11), 4722-4726, 2019
2019
Switching and synaptic characteristics of AZO/ZnO/ITO valence change memory device
FM Simanjuntak, S Chandrasekaran, F Gapsari, TY Tseng
IOP Conference Series: Materials Science and Engineering 494 (1), 012027, 2019
2019
Investigation of TiW thickness induced effect on Non-polar switching
TYT Sridhar Chandrasekaran, Firman Mangasa Simanjuntak
SSDM, 2017
2017
The Effect of Top Electrode Thickness on Switching Characteristics of Transparent Resistive Memory Devices
TYT Firman Mangasa Simanjuntak, Debashis Panda, Sridhar Chandrasekaran ...
TACT 2017 International Thin Films Conference, 2017
2017
Barrier layer thickness dependence in ECM to VCM transition in ZrO2-based RRAM
TYT S Chandrasekaran, FM Simanjuntak
TACT2017 International Thin Films Conference, 2017
2017
The Effect of Peroxide Surface Oxidation on Resistive Switching Characteristics of ZnO x -based Conducting Bridge Random Access Memory Devices
TYT FM Simanjuntak, S Chandrasekaran, CC Lin
TACT2017 International Thin Films Conference, 2017
2017
The effect of TiW thickness on non-polar to bipolar switching transformation in ZrO2-based CBRAM
S Chandrasekaran, FM Simanjuntak, TY Tseng
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