Matthew McCluskey

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Marianne Tarun, PhDWashington State University/Simon Fraser University/Higher Colleges of Technology在 hct.ac.ae 的電子郵件地址已通過驗證
Chris G. Van de WalleProfessor of Materials, University of California, Santa Barbara在 mrl.ucsb.edu 的電子郵件地址已通過驗證
Michael KneisslProfessor, Institute of Solid State Physics, TU Berlin / Ferdinand-Braun-Institut (FBH), Berlin在 physik.tu-berlin.de 的電子郵件地址已通過驗證
K. G. LynnWashington State University在 wsu.edu 的電子郵件地址已通過驗證
Dinesh ThapaPostdoctoral Fellow, Univeristy of Idaho在 vandals.uidaho.edu 的電子郵件地址已通過驗證
Kirill K. ZhuravlevRussian School of Mathematics在 russianschool.com 的電子郵件地址已通過驗證
Joel B VarleyLawrence Livermore National Laboratory在 llnl.gov 的電子郵件地址已通過驗證
Joel W. Ager IIISenior Staff Scientist, Lawrence Berkeley Nat. Laboratory and Adjunct Professor, MSE, UC Berkeley在 lbl.gov 的電子郵件地址已通過驗證
Kin Man YuDepartment of Physics, National Sun Yat Sen University,Kaohsiung, Taiwan, ROC在 mail.nsysu.edu.tw 的電子郵件地址已通過驗證
M Grant NortonProfessor of Materials Science and Engineering, Washington State University在 wsu.edu 的電子郵件地址已通過驗證
Michael A. (Mike) ScarpullaProfessor, MSE & ECE, University of Utah在 utah.edu 的電子郵件地址已通過驗證
Audrius AlkauskasCenter for Physical Sciences and Technology (FTMC), Vilnius, Lithuania在 ftmc.lt 的電子郵件地址已通過驗證
Catherine StampflProfessor of Physics, The University of Sydney在 sydney.edu.au 的電子郵件地址已通過驗證
Xianjun YeAlbert Einstein College of Medicine在 einsteinmed.edu 的電子郵件地址已通過驗證
Anderson JanottiUniversity of Delaware在 udel.edu 的電子郵件地址已通過驗證
Narendra S ParmarKorea Institute of Science &Technology and Washington State University在 wsu.edu 的電子郵件地址已通過驗證
Lynn A BoatnerDirector, ORNL Center for Radiation Detection Materials and Systems在 ornl.gov 的電子郵件地址已通過驗證
M Zafar IqbalComsats Institute of Information Technology, Islamabad, Pakistan在 comsats.edu.pk 的電子郵件地址已通過驗證
Leon HsuUniversity of Minnesota在 umn.edu 的電子郵件地址已通過驗證
Laxmikant SarafDirector, Electron Microscopy Facility, Clemson University, Clemson, SC在 clemson.edu 的電子郵件地址已通過驗證

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Matthew McCluskey

Professor of Physics, Washington State University

在 wsu.edu 的電子郵件地址已通過驗證 - 首頁

Semiconductor physics high pressures optics


標題按引用次數排序按年份排序按標題排序	引用次數引用次數	年份
Defects in ZnO MD McCluskey, SJ Jokela Journal of applied physics 106 (7), 071101-071101-13, 2009	1371	2009
Tutorial: Defects in semiconductors—Combining experiment and theory A Alkauskas, MD McCluskey, CG Van de Walle Journal of Applied Physics 119 (18), 2016	471	2016
Large band gap bowing of alloys MD McCluskey, CG Van de Walle, CP Master, LT Romano, NM Johnson Applied Physics Letters 72 (21), 2725-2726, 1998	275	1998
Phase separation in InGaN/GaN multiple quantum wells MD McCluskey, LT Romano, BS Krusor, DP Bour, NM Johnson, ... Applied Physics Letters 72 (14), 1730-1732, 1998	249	1998
Point defects in Ga2O3 MD McCluskey Journal of Applied Physics 127 (10), 2020	247	2020
Infrared spectroscopy of hydrogen in ZnO MD McCluskey, SJ Jokela, KK Zhuravlev, PJ Simpson, KG Lynn Applied Physics Letters 81, 3807, 2002	245	2002
Dopants and defects in semiconductors MD McCluskey, EE Haller CRC press, 2018	242	2018
Local vibrational modes of the Mg–H acceptor complex in GaN W Götz, NM Johnson, DP Bour, MD McCluskey, EE Haller Applied Physics Letters 69 (24), 3725-3727, 1996	241	1996
Metastability of oxygen donors in AlGaN MD McCluskey, NM Johnson, CG Van de Walle, DP Bour, M Kneissl, ... Physical review letters 80 (18), 4008-4011, 1998	237	1998
Fano interference of the Raman phonon in heavily boron‐doped diamond films grown by chemical vapor deposition JW Ager III, W Walukiewicz, M McCluskey, MA Plano, MI Landstrass Applied Physics Letters 66 (5), 616-618, 1995	228	1995
Persistent photoconductivity in strontium titanate MC Tarun, FA Selim, MD McCluskey Physical Review Letters 111 (18), 187403, 2013	198	2013
Optical properties of InGaN alloys grown by metalorganic chemical vapor deposition W Shan, W Walukiewicz, EE Haller, BD Little, JJ Song, MD McCluskey, ... Journal of applied physics 84, 4452, 1998	188	1998
Nitrogen is a deep acceptor in ZnO MC Tarun, MZ Iqbal, MD McCluskey AIP, 2011	170	2011
Local vibrational modes of impurities in semiconductors MD McCluskey Journal of Applied Physics 87 (8), 3593-3617, 2000	159	2000
Structure and stability of donors in ZnO from high-pressure and infrared spectroscopy SJ Jokela, MD McCluskey Physical Review B—Condensed Matter and Materials Physics 72 (11), 113201, 2005	157	2005
Ferromagnetism in : Evidence for Inter-Mn Exchange Mediated <?format ?>by Localized Holes within a Detached Impurity Band MA Scarpulla, BL Cardozo, R Farshchi, WMH Oo, MD McCluskey, KM Yu, ... Physical review letters 95 (20), 207204, 2005	141	2005
Compensation and hydrogen passivation of magnesium acceptors in β-Ga2O3 JR Ritter, J Huso, PT Dickens, JB Varley, KG Lynn, MD McCluskey Applied Physics Letters 113 (5), 2018	117	2018
Hydrogen in oxide semiconductors MD McCluskey, MC Tarun, ST Teklemichael Journal of Materials Research 27 (17), 2190-2198, 2012	100	2012
Interdiffusion of In and Ga in InGaN quantum wells MD McCluskey, LT Romano, BS Krusor, NM Johnson, T Suski, J Jun Applied physics letters 73 (9), 1281-1283, 1998	99	1998
Large and composition-dependent band gap bowing in InxGa1− xN alloys CG Van de Walle, MD McCluskey, CP Master, LT Romano, NM Johnson Materials Science and Engineering: B 59 (1-3), 274-278, 1999	88	1999

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