追蹤
Chao-Kai Cheng
Chao-Kai Cheng
在 ntu.edu.tw 的電子郵件地址已通過驗證
標題
引用次數
引用次數
年份
Strongly exchange-coupled and surface-state-modulated magnetization dynamics in Bi2Se3/yttrium iron garnet heterostructures
YT Fanchiang, KHM Chen, CC Tseng, CC Chen, CK Cheng, SR Yang, ...
Nature communications 9 (1), 223, 2018
872018
High-quality thulium iron garnet films with tunable perpendicular magnetic anisotropy by off-axis sputtering – correlation between magnetic properties and film strain
CN Wu, CC Tseng, YT Fanchiang, CK Cheng, KY Lin, SL Yeh, SR Yang, ...
Scientific reports 8 (1), 11087, 2018
702018
High-quality single-crystal thulium iron garnet films with perpendicular magnetic anisotropy by off-axis sputtering
CN Wu, CC Tseng, KY Lin, CK Cheng, SL Yeh, YT Fanchiang, M Hong, ...
AIP Advances 8 (5), 2018
362018
Van der Waals epitaxy of topological insulator Bi2Se3 on single layer transition metal dichalcogenide MoS2
KHM Chen, HY Lin, SR Yang, CK Cheng, XQ Zhang, CM Cheng, SF Lee, ...
Applied Physics Letters 111 (8), 2017
282017
Single-crystal atomic layer deposited Y2O3 on GaAs (0 0 1)–growth, structural, and electrical characterization
SY Wu, KH Chen, YH Lin, CK Cheng, CH Hsu, J Kwo, M Hong
Microelectronic Engineering 147, 310-313, 2015
222015
Topological insulator Bi2Se3 films on rare earth iron garnets and their high-quality interfaces
CC Chen, KHM Chen, YT Fanchiang, CC Tseng, SR Yang, CN Wu, ...
Applied Physics Letters 114 (3), 2019
192019
Single-Crystal Y2O3 Epitaxially on GaAs(001) and (111) Using Atomic Layer Deposition
YH Lin, CK Cheng, KH Chen, CH Fu, TW Chang, CH Hsu, J Kwo, M Hong
Materials 8 (10), 7084-7093, 2015
192015
Single-crystal epitaxial europium iron garnet films with strain-induced perpendicular magnetic anisotropy: Structural, strain, magnetic, and spin transport properties
MX Guo, CK Cheng, YC Liu, CN Wu, WN Chen, TY Chen, CT Wu, CH Hsu, ...
Physical Review Materials 6 (5), 054412, 2022
132022
Thickness-dependent topological phase transition and Rashba-like preformed topological surface states of α-Sn (001) thin films on InSb (001)
KHM Chen, KY Lin, SW Lien, SW Huang, CK Cheng, HY Lin, CH Hsu, ...
Physical Review B 105 (7), 075109, 2022
112022
Low-temperature grown single-crystal Si on epi Ge (001)-2× 1 and its oxidation: Electronic structure study via synchrotron radiation photoemission
YT Cheng, HW Wan, CK Cheng, CP Cheng, JR Kwo, M Hong, TW Pi
Applied Physics Express 13 (8), 085504, 2020
92020
GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y2O3–In comparison with atomic layer deposited Al2O3
HW Wan, KY Lin, CK Cheng, YK Su, WC Lee, CH Hsu, TW Pi, J Kwo, ...
Journal of Crystal Growth 477, 179-182, 2017
82017
Low-Temperature-Grown Single-Crystal Si Epitaxially on Ge, Followed by Direct Deposition of High-κ Dielectrics–Attainment of Low Interfacial Traps and Highly Reliable Ge MOS
HW Wan, YJ Hong, YT Cheng, CK Cheng, CH Hsu, CT Wu, TW Pi, J Kwo, ...
ACS Applied Electronic Materials 3 (5), 2164-2169, 2021
72021
A new stable, crystalline capping material for topological insulators
HY Lin, CK Cheng, KHM Chen, CC Tseng, SW Huang, MT Chang, ...
APL Materials 6 (6), 2018
72018
Surface electronic structure of Si1− xGex (001)-2× 1: A synchrotron radiation photoemission study
YT Cheng, HW Wan, CK Cheng, CP Cheng, J Kwo, M Hong, TW Pi
Applied Physics Express 13 (9), 095503, 2020
62020
Epitaxial ferromagnetic Fe3Si on GaAs (111) A with atomically smooth surface and interface
YC Liu, YW Chen, SC Tseng, MT Chang, SC Lo, YH Lin, CK Cheng, ...
Applied Physics Letters 107 (12), 2015
62015
Enhancement of effective dielectric constant using high-temperature mixed and sub-nano-laminated atomic layer deposited Y2O3/Al2O3 on GaAs (001)
KY Lin, LB Young, CK Cheng, KH Chen, YH Lin, HW Wan, RF Cai, SC Lo, ...
Microelectronic engineering 178, 271-274, 2017
42017
In-situ deposited HfO2 and Y2O3 on epi-Si/p-Ge—A comparative study of the interfacial properties and reliability
TY Chu, HW Wan, YT Cheng, CK Cheng, YJ Hong, J Kwo, M Hong
Japanese Journal of Applied Physics 61 (SC), SC1074, 2022
32022
Epitaxy of High-Quality Single-Crystal Hexagonal Perovskite YAlO3 on GaAs(111)A Using Laminated Atomic Layer Deposition
LB Young, CK Cheng, KY Lin, YH Lin, HW Wan, RF Cai, SC Lo, MY Li, ...
Crystal Growth & Design 19 (4), 2030-2036, 2019
32019
Single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs (111) A and (001) using atomic layer deposition
CK Cheng, LB Young, KY Lin, YH Lin, HW Wan, GJ Lu, MT Chang, ...
Microelectronic Engineering 178, 125-127, 2017
32017
Demonstration of large field effect in topological insulator films via a high-κ back gate
CY Wang, HY Lin, SR Yang, KHM Chen, YH Lin, KH Chen, LB Young, ...
Applied Physics Letters 108 (20), 2016
32016
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