| High-κ gate dielectrics: Current status and materials properties considerations GD Wilk, RM Wallace, JM Anthony Journal of applied physics 89 (10), 5243-5275, 2001 | 7759 | 2001 |
| Carbon-based supercapacitors produced by activation of graphene Y Zhu, S Murali, MD Stoller, KJ Ganesh, W Cai, PJ Ferreira, A Pirkle, ... science 332 (6037), 1537-1541, 2011 | 6641 | 2011 |
| Hafnium and zirconium silicates for advanced gate dielectrics GD Wilk, RM Wallace, JM Anthony Journal of Applied Physics 87 (1), 484-492, 2000 | 1367 | 2000 |
| The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2 A Pirkle, J Chan, A Venugopal, D Hinojos, CW Magnuson, S McDonnell, ... Applied Physics Letters 99 (12), 2011 | 1148 | 2011 |
| The role of oxygen during thermal reduction of graphene oxide studied by infrared absorption spectroscopy M Acik, G Lee, C Mattevi, A Pirkle, RM Wallace, M Chhowalla, K Cho, ... The Journal of Physical Chemistry C 115 (40), 19761-19781, 2011 | 1002 | 2011 |
| Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors C Gong, H Zhang, W Wang, L Colombo, RM Wallace, K Cho Applied Physics Letters 103 (5), 2013 | 916 | 2013 |
| Near-unity photoluminescence quantum yield in MoS2 M Amani, DH Lien, D Kiriya, J Xiao, A Azcatl, J Noh, SR Madhvapathy, ... Science 350 (6264), 1065-1068, 2015 | 902 | 2015 |
| Defect-Dominated Doping and Contact Resistance in MoS2 S McDonnell, R Addou, C Buie, RM Wallace, CL Hinkle ACS nano 8 (3), 2880-2888, 2014 | 892 | 2014 |
| Zirconium and/or hafnium oxynitride gate dielectric RM Wallace, RA Stoltz, GD Wilk US Patent 6,013,553, 2000 | 827 | 2000 |
| The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS2 Interfaces C Gong, L Colombo, RM Wallace, K Cho Nano letters 14 (4), 1714-1720, 2014 | 796 | 2014 |
| High-K materials and metal gates for CMOS applications J Robertson, RM Wallace Materials Science and Engineering: R: Reports 88, 1-41, 2015 | 768 | 2015 |
| Two-dimensional gallium nitride realized via graphene encapsulation ZY Al Balushi, K Wang, RK Ghosh, RA Vilá, SM Eichfeld, JD Caldwell, ... Nature materials 15 (11), 1166-1171, 2016 | 735 | 2016 |
| Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon GD Wilk, RM Wallace Applied Physics Letters 74 (19), 2854-2856, 1999 | 676 | 1999 |
| MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts S Chuang, C Battaglia, A Azcatl, S McDonnell, JS Kang, X Yin, M Tosun, ... Nano letters 14 (3), 1337-1342, 2014 | 638 | 2014 |
| Hole Selective MoOx Contact for Silicon Solar Cells C Battaglia, X Yin, M Zheng, ID Sharp, T Chen, S McDonnell, A Azcatl, ... Nano letters 14 (2), 967-971, 2014 | 619 | 2014 |
| GaAs interfacial self-cleaning by atomic layer deposition CL Hinkle, AM Sonnet, EM Vogel, S McDonnell, GJ Hughes, M Milojevic, ... Applied Physics Letters 92 (7), 2008 | 491 | 2008 |
| Manganese Doping of Monolayer MoS2: The Substrate Is Critical K Zhang, S Feng, J Wang, A Azcatl, N Lu, R Addou, N Wang, C Zhou, ... Nano letters 15 (10), 6586-6591, 2015 | 458 | 2015 |
| Highly Scalable, Atomically Thin WSe2 Grown via Metal–Organic Chemical Vapor Deposition SM Eichfeld, L Hossain, YC Lin, AF Piasecki, B Kupp, AG Birdwell, ... ACS nano 9 (2), 2080-2087, 2015 | 457 | 2015 |
| First-principles study of metal–graphene interfaces C Gong, G Lee, B Shan, EM Vogel, RM Wallace, K Cho Journal of Applied Physics 108 (12), 2010 | 456 | 2010 |
| Atomically Thin Resonant Tunnel Diodes built from Synthetic van der Waals Heterostructures YC Lin, RK Ghosh, R Addou, N Lu, SM Eichfeld, H Zhu, MY Li, X Peng, ... Nature Communications 6, 7311, 2015 | 449 | 2015 |
Christopher HinkleUniversity of Notre Dame, Electrical Engineering在 nd.edu 的電子郵件地址已通過驗證
